Fully depleted SOI-CMOS technology for high temperature IC applications

Thin-film fully depleted complementary metal oxide semiconductor (CMOS) silicon-on-insulator (SOI) technology is currentlly considered as the best mature contender for high-temperature analog or mixed-mode IC applications in the 200–400 °C temperature range. This is demonstrated by measurement results of the high-temperature performances of several operational transconductance amplifiers (OTA) with increasing architecture complexity. High-temperature design techniques are also proposed and validated by measurements.