Independent implant parameter effects on SIMOX SOI dislocation formation

Separation by implanted oxygen (SIMOX) material has proven to provide an extended temperature range (up to 500 °C) of operation for partially depleted silicon-on-insulator (SOI) test structures and product circuits in both transportation and communication applications. Such high temperature use is possible due to the built-in dielectric isolation which eliminates the isolation junction and its associated leakage. In order to further improve high temperature performance, material quality must be ever improving. This study examines the independent implant parameter effects of implant energy, implant temperature, and beam current density on the silicon threading dislocation density in standard and thin buried oxide (BOX) SIMOX material. We have found that increased implant energies and a slightly lower beam current will improve the dislocation density by at least an order of magnitude. The kinetics of vacancy formation as it relates to the above parameters are presented.