Title of article
Analysis of structural imperfections of silicon on insulator structures
Author/Authors
Beghi، نويسنده , , M.G. and Bottani، نويسنده , , C.E. and Ghislotti، نويسنده , , G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
20
To page
23
Abstract
Silicon-on-insulator structures prepared using the separation by implanted oxygen technology are studied by means of Brillouin light scattering. The deviation in the experimental wave velocity for modes guided within the SiO2 buried layer is ascribed to the presence of silicon inclusions dispersed in the oxide matrix. The presence of inclusions is taken into account by means of an effective medium theory which allows to determine the inclusion volume fraction and the anisotropy of their orientation.
Keywords
SIMOX technology , Silicon on insulator , Brillouin light scattering
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132316
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