• Title of article

    Thin film diamond metal-insulator field effect transistor for high temperature applications

  • Author/Authors

    Pang، نويسنده , , Lisa Y.S. and Chan، نويسنده , , Simon S.M. and Chalker، نويسنده , , Paul R. and Johnston، نويسنده , , Colin and Jackman، نويسنده , , Richard B.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1997
  • Pages
    5
  • From page
    124
  • To page
    128
  • Abstract
    bstract temperature depletion-mode metal-insulator field effect transistor (MISFET) has been fabricated from thin film polycrystalline diamond with a p-type (boron doped) channel and an insulating diamond gate. This device was successfully operated at 300 °C with low gate leakage currents, displaying pinch-off when in depletion and high levels of channel current modulation in enhancement. A transconductance value of 174 μS mm−1 has been measured, the highest reported value to date for this type of device.
  • Keywords
    Pinch off , Ohmic region , Schottky barrier
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1997
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2132340

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2132340