Title of article :
Silicon carbide on insulator formation by the Smart-Cut® process
Author/Authors :
Di Cioccio، نويسنده , , L. and Letertre، نويسنده , , F. and Le Tiec، نويسنده , , Y. and Papon، نويسنده , , A.M. and Jaussaud، نويسنده , , C. and Bruel، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Abstract :
For the first time silicon carbide on insulator structures (SiCOI) were achieved by the Smart-Cut® process. These structures were formed on polycrystalline SiC and on silicon substrates. The technological solutions used and the structures obtained are presented in this paper.
Keywords :
silicon carbide , Insulator structures , Wafer bonding , direct bonding
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
