Electrical properties of oxides on silicon carbide grown by remote plasma chemical vapor deposition annealed in different gas ambients

Oxides fabricated by a two-step remote plasma enhanced chemical vapor deposition (RPECVD)-process on n- and p-type 6H-SiC are electrically characterized. In contrast to thermal oxidation the semiconductor surface becomes a reactive interface during this process offering various technological possibilities to control chemical reactions. Since the growth rates are 15 times as high as for thermal oxidation this process appears attractive for thick field oxides, too. Oxide qualities comparable to those found for thermally grown ones are achieved. An in-situ plasma, especially for p-type SiC, assisted cleaning step in hydrogen before the deposition is found to play a very critical role concerning the oxide layer quality.