Characterization of p-AglnSe2/n-Zn0.35Cd0.65S polycrystalline thin film heterojunctions

Polycrystalline thin film p-AglnSe2/n-Zn0.35Cd0.65S heterojunctions were fabricated and the current density-voltage, capacitancevoltage and spectral response characteristics of the junctions were studied. The heterojunction was illuminated in the back-wall configuration and an open-circuit voltage of 425 mV, a short-circuit current density of 30 mA cm−2 and an electrical conversion efficiency of 7.5% have been obtained for a cell with an active area of 1 cm2 under a solar input of 100 mW cm−2.