Title of article
Microscopic gain theory for group III nitride semiconductor quantum wells
Author/Authors
Katarina Girndt، نويسنده , , A. and Jahnke، نويسنده , , F. and Koch، نويسنده , , S.W. and Chow، نويسنده , , W.W.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
6
From page
174
To page
179
Abstract
The gain/absorption properties of III–V nitride quantum well systems are computed microscopically using multi-band semiconductor Bloch equations. Lineshape and dephasing are treated at the level of quantum kinetic theory in second Born approximation in the Markovian limit. The compositional and structural properties of the quantum wells are modelled using k · p theory. Numerical results are presented for the example of several InGaN/AIGaN structures.
Keywords
Semiconductors , Carrier–carrier interaction , Optical properties
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132809
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