Multiwafer MOVPE technology for low dimensional Ga-Al-In-N structures

State-of-the-art GaN devices more and more make use of low-dimensional effects. Both light emitting diodes (LEDs) and laser diodes consist of quantum wells in their active regions. This requires an extremely precise control of layer thickness and uniformity of alloy composition during MOVPE growth. For mass production of these structures the requirements are even tougher. Wafer uniformity within one run and reproducibility from run to run are most critical issues here. In this paper we present a class of multiwafer MOVPE-reactors which have proven to produce high quality GaN based material. We will also present data on bulk layer uniformity as well as the excellent interface sharpness of quantum well structures.