Author/Authors :
Wüllner، نويسنده , , D and Schlachetzki، نويسنده , , A and Bِnsch، نويسنده , , P and Wehmann، نويسنده , , H.-H and Schrimpf، نويسنده , , T and Lacmann، نويسنده , , R and Kipp، نويسنده , , S، نويسنده ,
Abstract :
After a short discussion of errors incurred during atomic-force microscopy (AFM), we suggest methods for calibration. We describe specifically designed standards fabricated by metal organic vapor-phase epitaxy (MOVPE) which are utilized as a basis to calibrate the AFM microscope against a mechanical surface profiler and a scanning electron microscope (SEM). An important prerequisite is a well controlled technique to prepare the surface of the sample for AFM. This is demonstrated for the case of InGaAs/InP.
Keywords :
Calibration standards , InGaAs on InP , Quantum structures , Atomic-force microscopy