Author/Authors :
Overend، نويسنده , , N and Nogaret، نويسنده , , A and Gallagher، نويسنده , , B.L and Main، نويسنده , , P.C and Henini، نويسنده , , M and Wirtz، نويسنده , , R and Newbury، نويسنده , , R and Marrows، نويسنده , , C and Howson، نويسنده , , M.A and Beaumont، نويسنده , , S.P، نويسنده ,
Abstract :
We demonstrate the existence of a new type of giant magnetoresistance (GMR) in hybrid semiconductor/ferromagnetic devices. We observe up to a ∼1000% increase in resistance for applied fields of only ∼100 mT at a temperature of 4 K and ∼1% at 300 K. The GMR has a strong angular dependence and it can also be strongly hysteretic. Optimisation of device parameters is expected to increase considerably the magnitude of GMR. Such devices may have applications as magnetic sensors and memories.
Keywords :
Semiconductors , Magnetoresistance-giant , Devices , Heterostructures
