Author/Authors :
Nakashima، نويسنده , , Hisao and Kato، نويسنده , , Takehiko and Maehashi، نويسنده , , Kenzo and Nishida، نويسنده , , Takehiro and Inoue، نويسنده , , Yoshiji and Takeuchi، نويسنده , , Toshikazu and Inoue، نويسنده , , Koichi and Fischer، نويسنده , , Peter and Christen، نويسنده , , Jürgen and Grundmann، نويسنده , , Marius and Bimberg، نويسنده , , Dieter، نويسنده ,
Abstract :
GaAs quantum wires are naturally formed by MBE on vicinal GaAs(110) surfaces with coherently aligned giant growth steps due to thickness modulation at step edges. Two-step growth with growth interruption is employed to improve uniformity and confinement energies of quantum wires, which are confirmed by photo and cathodoluminescence measurements.
Keywords :
Growth interruption , cathodoluminescence , Photoluminescence , Vicinal surface , GaAs quantum wire , Molecular Beam Epitaxy
