Title of article :
Hydride vapour phase epitaxy for nanostructures
Author/Authors :
Rodr??guez Messmer، نويسنده , , S. Lourdudoss، نويسنده , , S and Ahopelto، نويسنده , , J and Lipsanen، نويسنده , , H and Hieke، نويسنده , , K and Wesstr?m، نويسنده , , J.-O and Reithmaier، نويسنده , , J.P and Kerkel، نويسنده , , K and Forchel، نويسنده , , A and Seifert، نويسنده , , W and Carlsson، نويسنده , , N and Samuelson، نويسنده , , L، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
4
From page :
238
To page :
241
Abstract :
The flexibility of hydride vapour phase epitaxy (HVPE) for fabricating nanostructures is demonstrated by exemplifying three cases: (1) improvement of optical characteristics of wet etched wires after overgrowth, (2) improvement of electrical characteristics of reactive ion etched wires after regrowth and (3) fabrication of InP templates on GaAs substrate written previously with focused ion beam (FIB).
Keywords :
Patterned and selective area growth , Reduction of non-radiative centres , Hydride vapour phase epitaxy
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1998
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2133054
Link To Document :
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