Author/Authors :
Abrosimov، نويسنده , , N.V. and Alex، نويسنده , , V. and Dyachenko-Dekov، نويسنده , , D.V. and Iunin، نويسنده , , Yu.N. and Nikitenko، نويسنده , , V.I. and Orlov، نويسنده , , V.I. and Rossolenko، نويسنده , , S.N. and Schrِder، نويسنده , , W.، نويسنده ,
Abstract :
The individual dislocation mobility in bulk single SiGe crystals has been studied both with conventional and intermittent loading (IL) techniques. A model is used connecting the experimental data on dislocation paths with values of kink displacements under IL. The experimental data are compared with two models describing the interaction of a dislocation with point defects. It is shown that with small Ge concentration Cottrell atmosphere determines the dynamical drag of the dislocation giving rise to threshold immobilisation. With higher Ge content the specific mode of kink drift along the dislocation line (the motion in the field of random forces) takes place.
Keywords :
SiGe alloys , Dislocation kink , Dislocation , Point Defects
