Sintering of indium–tin–oxide with vanadium oxide additive

Indium–tin–oxide (tin-doped indium oxide) powders and the mixture of indium oxide In2O3 powders and tin oxide SnO2 powders were sintered pressurelessly in air with vanadium oxide V2O5 additive (1.0 wt.%) whose melting point (≈690°C) is much lower than the sintering temperature. Densification was remarkably observed without sacrificing the electroconductivity; e.g. relative density of 96% and resistivity of 5.5×10−4 Ω cm was obtained when sintered at 1400°C. The mechanism of the densification was discussed in terms of the liquid phase sintering and the formation of V–In–O compound.