Title of article
Artificial neural network prediction of the band gap and melting point of binary and ternary compound semiconductors
Author/Authors
Zhaochun، نويسنده , , Zhang and Ruiwu، نويسنده , , Peng and Nianyi، نويسنده , , Chen، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
4
From page
149
To page
152
Abstract
In this paper, an artificial neural network trained by experimental data has been used to predict the values of the band gap and melting point of III–V, II–VI binary and I–III–VI2, II–IV–V2 ternary compound semiconductors. The calculated results were in good agreement with the experimental ones.
Keywords
III–V , II–VI , I–III–VI2 , II–IV–V2 , melting point , Artificial neural network , Band gap
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1998
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2133309
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