Title of article :
XPS study of plasma treated carbon layers deposited on porous silicon
Author/Authors :
Beshkov، نويسنده , , G and Krastev، نويسنده , , V and Velchev، نويسنده , , N and Marinova، نويسنده , , Ts، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
4
From page :
1
To page :
4
Abstract :
A carbon film deposited on porous silicon in nitrogen plasma has been investigated by XPS. The presence of different carbon–nitrogen bonds in the whole carbonitride layer has been established. Irrespective of the low percentage of nitrogen (about 6%), it is found to participate in cyanide groups, bonds characteristic of β-C3N4 as well as in C–N and CN bonds.
Keywords :
Carbon film , Nitrogen plasma , XPS , Porous silicon
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1998
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2133405
Link To Document :
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