Title of article :
H2 molecules in crystalline silicon
Author/Authors :
Pritchard، نويسنده , , R.E. and Ashwin، نويسنده , , M.J. and Newman، نويسنده , , R.C. and Tucker، نويسنده , , J.H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
5
From page :
1
To page :
5
Abstract :
Infrared spectra from low-doped, hydrogenated silicon have revealed very weak absorption from hydrogen molecules. In Czochralski silicon, vibrational modes from molecules paired with interstitial oxygen atoms (OiH2) have been identified, together with a vibrational mode (ν3HH) from molecules trapped at a second site. A low temperature annealing study (T<200°C) has now led to the proposal that this second site is an interstitial lattice site with the axes of the isolated molecules aligned along either 〈111〉 or 〈110〉 to account for their IR activity. The ν3HH mode is also detected in hydrogenated, boron-doped float zone (FZ) Si, together with the stretch mode of HB pairs. An estimate of the molecular concentration indicates that this is the source of so-called ‘hidden hydrogen’ that is observed for boron-doped Si. This identification is confirmed in the present sample by a second low temperature annealing study. Further work is in progress to establish the dissociation mechanism of H2 molecules and the subsequent formation of HB pairs.
Keywords :
Silicon , vibrational mode , Hydrogen
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1999
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2133717
Link To Document :
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