Interaction of hydrogen (deuterium) molecules with interstitial oxygen atoms in silicon

Formation kinetics of oxygen–hydrogen (deuterium) complexes which give rise to an infrared absorption line at 1075.1 (1076.4) cm−1 have been studied with a method of isothermal annealing in the temperature range of 30–150°C in Czochralski-grown Si crystals with different oxygen content. It was inferred that the capture of mobile hydrogen molecules (H2) by interstitial oxygen atoms accounts for the considered formation kinetics. The values of diffusivity of hydrogen (deuterium) molecules and binding energy of Oi–H2 (D2) complex were estimated from the analysis of the results obtained.