Photoluminescence characterisation of hydrogen-related centres in silicon

The results of photoluminescence studies on hydrogen-related centres created in thermal treated silicon are reported. An account is given of the optical, electronic and structural characteristics of the defects obtained from uniaxial stress, magnetic field and temperature-dependence measurements and from isotope substitution. It is shown that most of the centres create an acceptor state (−/0) in the upper half of the band gap and that their excited electronic states can be accounted for within the effective mass approximation.