Title of article
Cu-related complexes in silicon
Author/Authors
M. and Estreicher، نويسنده , , S.K. and Hastings، نويسنده , , J.L.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
155
To page
158
Abstract
Hartree–Fock calculations of Cu+ in Si are performed in clusters containing 44–100 Si atoms. The configurations studied include interstitial and substitutional Cu+, copper–acceptor pairs, and copper–hexavacancy complexes. The preliminary results presented below include equilibrium configurations, electronic structures, and binding energies.
Keywords
Theory , Copper , Copper-acceptor pairs , Gettering
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2133790
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