Title of article
Smooth GaN surfaces by photoinduced electro-chemical etching
Author/Authors
Rotter، نويسنده , , T and Aderhold، نويسنده , , Bodo Mistele، نويسنده , , D and Semchinova، نويسنده , , O and Stemmer، نويسنده , , J and Uffmann، نويسنده , , D and Graul، نويسنده , , J، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
5
From page
350
To page
354
Abstract
We have etched n-GaN grown both by plasma assisted MBE and MOCVD in 0.5 M KOH under HeCd-laser illumination (110 mW cm−2) and controlled the photocurrent by an external voltage source. The reproducible etch depths were linear with respect to the charge. The examination of the dissolution potential revealed strong dependence on illumination and current. Thereby, regimes to obtain smoothly etched surfaces were found at low dissolution potentials. Demonstration of the possibilities in photoelectrochemical (PEC) etching are given.
Keywords
Wet etching , GaN , Photoanodic dissolution
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2133998
Link To Document