Dielectric properties of Al ∣ V2O5 ∣ Al thin film sandwich structures

Vanadium pentoxide thin films were prepared by the electron beam evaporation technique onto Corning 7059 glass substrates kept at a temperature of Ts=423 K. The dielectric properties of Al ∣ V2O5 ∣ Al thin film sandwich structures were studied in the frequency range 0.1–100 kHz and in the temperature range 125–450 K. Both the dielectric constant and the dielectric loss factor were found to depend on frequency and temperature. The activation energy obtained for the dielectric relaxation process was about 0.36 eV.