Author/Authors :
Grosse، نويسنده , , P and Basset، نويسنده , , G and Calvat، نويسنده , , C and Couchaud، نويسنده , , M and Faure، نويسنده , , C and Ferrand، نويسنده , , B and Grange، نويسنده , , Y and Anikin، نويسنده , , M and Bluet، نويسنده , , J.M and Chourou، نويسنده , , K and Madar، نويسنده , , R، نويسنده ,
Abstract :
We have investigated the influence of crucible purity on SiC crystals grown by physical vapor transport. A quadrupole gas analyser has been used to monitor the outgas stage of the growth system. Secondary ion mass spectroscopy (SIMS) and glow discharge mass spectroscopy (GDMS) analysis have been performed to study the purity of the graphite at different stages of the thermal treatment and to study the transfer of impurities into the grown crystals.
Keywords :
Graphite purity , GDMS , SIMS , silicon carbide
