Author/Authors :
Rost، نويسنده , , H.-J and Siche، نويسنده , , D and Dolle، نويسنده , , Eiserbeck، نويسنده , , W and Müller، نويسنده , , T and Schulz، نويسنده , , D and Wagner، نويسنده , , G and Wollweber، نويسنده , , J، نويسنده ,
Abstract :
6H-SiC-crystals have been grown using the modified Lely method. The growth rate was investigated for dependence on the growth time, the source composition and the system pressure. It was shown that the growth rate is strongly influenced by the deviation from the stoichiometry and the system pressure. The influence of the composition of the vapour phase is dominant compared with the system pressure in the first stages of the growth process. The average growth rate decreases with increasing growth duration.
