Author/Authors :
Anikin، نويسنده , , M and Chourou، نويسنده , , K and Pons، نويسنده , , M and Bluet، نويسنده , , J.M. and Madar، نويسنده , , R and Grosse، نويسنده , , P and Faure، نويسنده , , C and Basset، نويسنده , , G and Grange، نويسنده , , Y، نويسنده ,
Abstract :
6H–SiC ingots with diameters of 25–35 mm with flat natural surfaces have been grown by the Modified Lely method. Influence of the growth conditions and crucible geometry on the growth front shape and on the enlargement of the seeds have been investigated. The developed growth process allows the growth of ingots under quasi-equilibrium conditions with and without enlargement at a growth rate between 1–1.5 mm h−1.
Keywords :
SiC sublimation growth , Growth front flatness , Low grain boundaries , Enlargement , Macrodefects
