Title of article
Influence of growth conditions on the defect formation in SiC ingots
Author/Authors
Anikin، نويسنده , , M and Chourou، نويسنده , , K and Pons، نويسنده , , M and Bluet، نويسنده , , J.M. and Madar، نويسنده , , R and Grosse، نويسنده , , P and Faure، نويسنده , , C and Basset، نويسنده , , G and Grange، نويسنده , , Y، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
73
To page
76
Abstract
6H–SiC ingots with diameters of 25–35 mm with flat natural surfaces have been grown by the Modified Lely method. Influence of the growth conditions and crucible geometry on the growth front shape and on the enlargement of the seeds have been investigated. The developed growth process allows the growth of ingots under quasi-equilibrium conditions with and without enlargement at a growth rate between 1–1.5 mm h−1.
Keywords
SiC sublimation growth , Growth front flatness , Low grain boundaries , Enlargement , Macrodefects
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134060
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