Title of article
Modelling of SiC sublimation growth process: analyses of macrodefects formation
Author/Authors
Chourou، نويسنده , , K and Anikin، نويسنده , , M and Bluet، نويسنده , , J.M and Dedulle، نويسنده , , J.M. and Madar، نويسنده , , R and Pons، نويسنده , , M and Blanquet، نويسنده , , E and Bernard، نويسنده , , C and Grosse، نويسنده , , P and Faure، نويسنده , , C and Basset، نويسنده , , G and Grange، نويسنده , , Y، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
82
To page
85
Abstract
The influence of the temperature and its gradient on powder features and defect formation is discussed in the light of experimental results in the physical vapour transport process. The recrystallization of the source powder during crystal growth appears to be directly related to the temperature gradient field within the source material. Moreover, several calculations made on different experimental geometries of crucible show that the location of the macrodefects is strongly related to the temperature gradient in the crystal. Technical solutions in order to avoid or reduce the macrodefects formation are discussed.
Keywords
sublimation growth , Macrodefects , Numerical simulation , heat transfer
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134062
Link To Document