Title of article
Thermodynamical calculations on the chemical vapour transport of silicon carbide
Author/Authors
Chaussende، نويسنده , , D and Monteil، نويسنده , , Y and Aboughe-nze، نويسنده , , P and Brylinski، نويسنده , , C and Bouix، نويسنده , , J، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
98
To page
101
Abstract
We have performed thermodynamical calculations in order to oversee the potential of a new method for growing silicon carbide: the chemical vapour transport process. In this way we have been able to select possible transporting agents and to show the nature of the deposits with varying parameters.
Keywords
Chemical vapour transport , silicon carbide , Thermodynamical calculations
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134066
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