Title of article
Optimization of sublimation growth of SiC bulk crystals using modeling
Author/Authors
Ramm، نويسنده , , M.S and Mokhov، نويسنده , , E.N and Demina، نويسنده , , S.E and Ramm، نويسنده , , M.G. and Roenkov، نويسنده , , A.D. and Vodakov، نويسنده , , Yu.A and Segal، نويسنده , , A.S and Vorob’ev، نويسنده , , A.N and Karpov، نويسنده , , S.Yu and Kulik، نويسنده , , A.V and Makarov، نويسنده , , Yu.N، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
6
From page
107
To page
112
Abstract
Analysis of factors determining growth rate and shape of the crystallization front during sublimation growth of bulk SiC crystals is presented. For this purpose, mass transport of species in the graphite crucible coupled with global heat transfer in a sublimation growth system is studied. Specific features of the growth process in a tantalum container are discussed.
Keywords
Bulk crystals , SiC , Tantalum container , Etching of graphite , sublimation growth
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134068
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