Author/Authors :
Camassel، نويسنده , , J and Juillaguet، نويسنده , , S and Planes، نويسنده , , N and Raymond، نويسنده , , A and Grosse، نويسنده , , P and Basset، نويسنده , , G and Faure، نويسنده , , C and Couchaud، نويسنده , , M and Bluet، نويسنده , , J.M and Chourou، نويسنده , , K and Anikin، نويسنده , , M and Madar، نويسنده , , R، نويسنده ,
Abstract :
We report on purity improvement effects which recently have been observed when comparing different series of wafers produced in two separate, but basically similar, home-made physical vapor transport (PVT) reactors. Looking in detail for the origin of this phenomenon, we have found a strong influence of the residual purity of the graphite material used to manufacture the crucibles. After proper optimization, a second effect has been found. It manifests when the residual level of impurities in the seed material is high and provides evidence for in situ auto-doping. Finally, quantitative analyses of C(V) characteristics and Raman spectra have been done. In this way we follow the trend in residual carrier concentration and mobility.
Keywords :
Bulk SiC , Purity assessment , Carrier concentration , Carrier mobility , Residual doping
