Deep level defects in H+ implanted 6H–SiC epilayers and in silicon carbide on insulator structures

To investigate the origin of the high level of electrical compensation induced by hydrogen-implantation during the fabrication of SiCOI (Silicon Carbide layer transferred On Insulator) structures we have performed a comparative investigation of the electrical and optical properties of, both, 6H–SiCOI structures and hydrogen-implanted 6H–SiC epitaxial layers. We have found that the high resistivity of SiCOI structures comes most probably from an effect of compensation by deep traps created during the implantation, rather than H-passivation of dopants. The D1-center, observed by photoluminescence after the high temperature treatment, and the Z1/Z2-center or C-defect, observed by deep level transient capacitance spectroscopy, could be the signature of these compensating centers.