Title of article
Electrical noise used as a tool for assessing the defectivity of SiC Schottky diodes
Author/Authors
Royet، نويسنده , , A.S and Ouisse، نويسنده , , T and Billon، نويسنده , , T and Jaussaud، نويسنده , , C and Cabon، نويسنده , , B، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
402
To page
405
Abstract
We report the observation of random telegraph signals (RTS) occurring in the forward regime of silicon carbide Schottky diodes. RTS noise is attributed to the modulation of the conductivity either by the trapping/detrapping of a single electron or by the switching of a bistable defect, in the neighbourhood of a localized current path. Noise measurement is therefore a convenient and non-destructive method for assessing the defectivity of SiC power diodes.
Keywords
Electrical noise , Random telegraph signal , silicon carbide , Schottky diodes
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134128
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