Title of article
Current–voltage characteristics of large area 6H-SiC pin diodes
Author/Authors
Badila، نويسنده , , M and Tudor، نويسنده , , B and Brezeanu، نويسنده , , Gh and Locatelli، نويسنده , , M.L and Chante، نويسنده , , J.P and Millan، نويسنده , , J and Godignon، نويسنده , , Ph and Lebedev، نويسنده , , A and Banu، نويسنده , , V، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
433
To page
436
Abstract
Recent improvements in SiC substrate and epilayer quality have enabled the fabrication of devices with high voltage blocking capabilities. Boron compensation of a n-type base layer is often used in pn high voltage SiC diodes. In the case of large area devices, defects causing premature breakdown come into view. This paper reports 6H-SiC boron compensated (BC) pn junctions, having an experimental maximum breakdown voltage of 900 V for diodes with area up to 0.72 mm2. The current–voltage (I–V) characteristics of the structures are modeled and characterized and comparison with similar but uncompensated junctions is made.
Keywords
parameter extraction , Boron compensation , Saturation currents , Current–voltage characteristics , Breakdown voltage , SiC pn junction
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134135
Link To Document