Title of article
γ-Ray irradiation effects on 6H-SiC MOSFET
Author/Authors
Ohshima، نويسنده , , Takeshi and Yoshikawa، نويسنده , , Masahito and Itoh، نويسنده , , Hisayoshi and Aoki، نويسنده , , Yasushi and Nashiyama، نويسنده , , Isamu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
5
From page
480
To page
484
Abstract
The effects of γ-ray irradiation on the performance of enhancement-type n-channel 6H-SiC metal-oxide-semiconductors field effect transistors (MOSFETs) were studied. The gate oxide of the 6H-SiC MOSFETs was fabricated using pyrogenic or dry oxidation process. Oxide-trapped charges and interface traps produced in the MOSFETs by irradiation are evaluated from changes in the subthreshold–current curve. It is found that the net numbers of radiation-induced oxide-trapped charges and interface traps depend on the oxidation process. From a comparison of radiation response between 6H-SiC and Si MOSFETs, 6H-SiC MOSFETs are demonstrated to have higher radiation resistance.
Keywords
Oxide-trapped charge , 6H-SiC , interface traps , MOSFET , ?-Ray irradiation , Pyrogenic and dry oxidation processes
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134147
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