γ-Ray irradiation effects on 6H-SiC MOSFET

The effects of γ-ray irradiation on the performance of enhancement-type n-channel 6H-SiC metal-oxide-semiconductors field effect transistors (MOSFETs) were studied. The gate oxide of the 6H-SiC MOSFETs was fabricated using pyrogenic or dry oxidation process. Oxide-trapped charges and interface traps produced in the MOSFETs by irradiation are evaluated from changes in the subthreshold–current curve. It is found that the net numbers of radiation-induced oxide-trapped charges and interface traps depend on the oxidation process. From a comparison of radiation response between 6H-SiC and Si MOSFETs, 6H-SiC MOSFETs are demonstrated to have higher radiation resistance.