Title of article
The nature of Mn center and exchange interaction in Ga1−xMnxAs dilute magnetic semiconductor
Author/Authors
Twardowski، نويسنده , , A، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
7
From page
96
To page
102
Abstract
The s,p–d exchange interaction in GaMnAs is discussed in view of different charge states of Mn impurities present in this material. The ferromagnetic to antiferromagnetic crossover of p–d exchange is discussed on the grounds of varying concentration of neutral and ionized Mn acceptor centers in bulk, Mn-doped GaAs and GaMnAs epilayers.
Keywords
Exchange interaction , Dilute Magnetic Semiconductors , Spin resonance
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134286
Link To Document