Title of article
Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces
Author/Authors
Koumetz، نويسنده , , S. and Marcon، نويسنده , , J. L. Gautier، نويسنده , , S. and Ketata، نويسنده , , K. and Ketata، نويسنده , , M. and Dubois، نويسنده , , C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
3
From page
55
To page
57
Abstract
The diffusion of Be during post-growth Rapid Thermal Annealing (RTA) in InGaAs, InGaAsP, InGaAs/InGaAsP and InGaAs/InP epitaxial structures grown by Gas Source Molecular Beam Epitaxy (GSMBE) has been studied. The observed Secondary Ion Mass Spectrometry (SIMS) concentration distributions, obtained for annealing cycles with time durations of 10–240 s and temperatures in the range of 700–900°C for Be doping concentration of 3×1019 cm−3, could be explained by kick-out mechanism considering the neutral Be interstitial species and positively charged group-III self-interstitials.
Keywords
Gas Source Molecular Beam Epitaxy (GSMBE) , Rapid thermal annealing (RTA) , BE , diffusion
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1999
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2134545
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