Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces

The diffusion of Be during post-growth Rapid Thermal Annealing (RTA) in InGaAs, InGaAsP, InGaAs/InGaAsP and InGaAs/InP epitaxial structures grown by Gas Source Molecular Beam Epitaxy (GSMBE) has been studied. The observed Secondary Ion Mass Spectrometry (SIMS) concentration distributions, obtained for annealing cycles with time durations of 10–240 s and temperatures in the range of 700–900°C for Be doping concentration of 3×1019 cm−3, could be explained by kick-out mechanism considering the neutral Be interstitial species and positively charged group-III self-interstitials.