Preparation and characterization of n- and p-type ytterbium doped InP epitaxial layers

In this paper we pursue the effect of ytterbium (Yb) addition on the physical properties of liquid phase epitaxially (LPE) grown thin InP layers. A series of InP layer samples were prepared by LPE from melts containing 0–0.4 wt% of Yb. The grown layers were examined by Hall effect and C-V measurements, photoluminescence (PL) spectroscopy, and Rutherford backscattering spectrometry (RBS). We have found that Yb impurity was incorporated into the lattice of InP layer. With increasing Yb content in the growth melt the layer’s conductivity smoothly changed from n- to p-type when the Yb admixture exceeded a certain limit. On the basis of these results we prepared p-n junctions in the InP layers directly doped by Yb, and tested them by C-V measurements.