Title of article :
Isoperiodical heterostructures GaInAsSb/GaSb grown by LPE from Sb-rich melts in spinodal decomposition area
Author/Authors :
Vasil’ev، نويسنده , , V.I and Nikitina، نويسنده , , I.P and Smirnov، نويسنده , , V.M and Tret’yakov، نويسنده , , D.N، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
3
From page :
67
To page :
69
Abstract :
Ga1−xInxAsySb1−y layers lattice-matched to GaSb were grown by LPE from Sb-rich melts with compositions up to x=0.4 inside the spinodal decomposition area. Crystal and optical properties of solid solutions were studied using double-crystal X-ray diffraction (DCXRD), photoluminescene (PL). The main conditions which provide epitaxial growth of stable solid solutions in spinodal decomposition area were clarified. It was found that the properties of epitaxial layers depended on the value and the type of deformation during the growth as well as the layer thickness.
Keywords :
LPE , Isoperiodical heterostructures , Sb-rich melts , Spinodal decomposition area
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1999
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2134555
Link To Document :
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