InGaAs layers of high quality grown on patterned GaAs substrates with trenches

The InxGa1−xAs (x=0.06, 0.10, 0.15) layers were grown on SiNx-masked GaAs (111)B substrates with trenches of 1 mm φ by the liquid phase epitaxial (LPE) method. The quality of grown layers was evaluated by measuring the distribution of etch pit density and microscopic photoluminescence (PL) spectra. The InGaAs layer formed a bridge over the trench deeper than 40 μm. Due to the fact that the grown layer did not contact the substrate surface, except the trench periphery, high quality layers were obtained. Even if the In composition increased to 0.15, a bridged layer was formed.