Depth profiles of MeV C+ and C2+ ions implanted in III–V semiconductors

A study has been made to investigate the depth profiles of MeV C atoms implanted in a few common III–V semiconducting targets. Single crystal substrates of GaP, GaAs, GaSb, InP and InSb were used in the present study. They were implanted with C+ and C2+ ions at implantation energies of 1.00 and 2.00 MeV respectively, and a dose of 5×1014 C-atoms cm−2. The projected range and longitudinal straggling of the implanted C atoms have been measured by the secondary ion mass spectroscopy (SIMS) technique and compared with the theoretical predictions. The measured range parameters of C+ ions agree moderately well with the theory (TRIM) but the longitudinal straggling is significantly greater in the case of C2+ implantations. In this case the measured Rp values are also slightly lower as compared to that target implanted with C+ ions. A tentative explanation for these results is presented.