Stress reduction and structural quality improvement due to In doping in GaAs/Si

Influence of indium doping (0.04–0.59%) on the qualities of GaAs epilayers on Si substrates by chemical beam epitaxy (CBE) has been studied. The thermally induced biaxial tensile stress in GaAs/Si doped with 0.29% of indium decreases to 2/3 of that in the layer without In-doping. The atomic force microscopy (AFM) average roughness (Ra) and root mean square (RMS) roughness values reached to as minimum as 1.07 and 1.34 nm, respectively, for 0.29%, indium doped layer which is comparable to the homoepitaxy of GaAs. The improvement of the crystalline quality was also verified by Raman spectroscopy.