Author/Authors :
V. Zwiller، نويسنده , , Valéry and Chitica، نويسنده , , Nicolae and Persson، نويسنده , , Jonas and Pistol، نويسنده , , Mats-Erik and Seifert، نويسنده , , Werner and Samuelson، نويسنده , , Lars and Hammar، نويسنده , , Mattias and Streubel، نويسنده , , Klaus and Goobar، نويسنده , , Edgard and Bjِrk، نويسنده , , Gunnar، نويسنده ,
Abstract :
Self-assembled InP quantum dots have been grown in planar microcavities. The dots were embedded in a Ga0.52In0.48P spacer grown on top of a high reflectance epitaxial Al0.29Ga0.71As/AlAs distributed Bragg reflector (DBR) to obtain a 3λ/4 cavity. The Fabry–Perot microcavity is formed between the AlGaAs/AlAs DBR and a dielectric SiNx/SiO2 DBR deposited on top of the GaInP spacer. The quantum dot emission is centered at 1.62 eV at 7 K. The microcavity resonance is centered at 1.65 eV, with a linewidth of 2 meV. Micro-photoluminescence (PL) studies using different objectives with different numerical apertures enable the collection of transversal modes.
Keywords :
InP , Photoluminescence , Quantum dots , photonics , Microcavity , Nano-structures
