Atomistic simulation of ion implantation and its application in Si technology

Atomistic computer simulations based on the binary collision approximation (BCA) are very well suited to predict the dependence of as-implanted dopant profiles on implant parameters like energy, dose and direction of incidence as well as on the arrangement of oxide, poly-Si and other materials on the single-crystalline Si substrate. In particular channeling effects, the enhanced dechanneling due to accumulation of radiation defects during ion bombardment and due to pre-existing ion-beam-induced defects can be simulated in a reasonable manner. The BCA code Crystal-TRIM was successfully integrated into 1D and 2D process simulators for the Si technology. The application of the trajectory splitting algorithm and the lateral duplication method ensures a high computational efficiency.