Author/Authors :
Bostrِm، نويسنده , , O and Pichaud، نويسنده , , B and Regula، نويسنده , , M and Bajard، نويسنده , , J.C and Blondiaux، نويسنده , , G and Soltanovich، نويسنده , , O.A and Yakimov، نويسنده , , E.B and Lhorte، نويسنده , , A and Quoirin، نويسنده , , J.B، نويسنده ,
Abstract :
Gold and platinum depth profile measurements were reported using different techniques (secondary ion mass spectroscopy, SIMS; neutron activation analysis, NAA; capacitance–voltage measurement, C–V) which were able to detect low concentrations of the metals. The kick-out simulation reproduced well the experimental profiles, provided an eventual metal accumulation was taken into account resulting in a shift of the metal source and of the self-interstitials sink. The influence of high As concentration on the Au solubility limit was noticed also.
Keywords :
Au(Pt) profiles , Au(Pt) diffusion , power devices , Fast switching
