Effect of nitrogen ion impingement during molecular beam epitaxy growth of GaAs as a function of acceleration energy

Nitrogen ions were impinged during the molecular beam epitaxial growth of GaAs at 550°C, varying its acceleration energy in the range from 100 eV to 10 keV. No photoluminescence (PL) emissions were observed in as-grown condition when ion acceleration energy becomes higher than 500 eV. After high-temperature annealing at 750°C, structural defects were removed and incorporated nitrogen atoms became optically active. PL emissions that relate to isoelectronic impurity and dilute GaAsN alloys were observed with an ion acceleration energy of 10 keV.