Title of article
Effect of the Si wafer pretreatment on the patterned substrate morphology and growth of Hg1−xCdxTe PLD films
Author/Authors
Gorbach، نويسنده , , T.Ya and Holiney، نويسنده , , R.Yu and Matveeva، نويسنده , , L.A and Svechnikov، نويسنده , , S.V and Venger، نويسنده , , E.F and Kuzma، نويسنده , , M and Wisz، نويسنده , , G، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
288
To page
291
Abstract
Silicon patterned substrates and Hg1−xCdxTe films prepared by pulse laser deposition (PLD) on these substrates were examined by scanning electron microscopy (SEM), electronography (EG) and low-field electroreflectane (ER) spectroscopy in dependence on a pretreatment of Si wafers and the microrelief type. Change in morphologies of the substrates and films is discussed. The crystallinity data and analysis of ER spectra parameters are presented.
Keywords
Silicon , Hg1-xCdxTe film , Pattern substrate , Electroreflectance spectrum , Cutting pretreatment
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2135201
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