Effect of the Si wafer pretreatment on the patterned substrate morphology and growth of Hg1−xCdxTe PLD films

Silicon patterned substrates and Hg1−xCdxTe films prepared by pulse laser deposition (PLD) on these substrates were examined by scanning electron microscopy (SEM), electronography (EG) and low-field electroreflectane (ER) spectroscopy in dependence on a pretreatment of Si wafers and the microrelief type. Change in morphologies of the substrates and films is discussed. The crystallinity data and analysis of ER spectra parameters are presented.