Author/Authors :
Li، نويسنده , , Huaixiang and Xue، نويسنده , , Chengshan and Chen، نويسنده , , Lusheng and Zhou، نويسنده , , Wu and Liu، نويسنده , , Guirong and Chen، نويسنده , , Yansheng and Duan، نويسنده , , Shuzhen، نويسنده ,
Abstract :
Precipitation of oxygen has been studied by annealing and measuring infrared spectra with a Czochralski (CZ) silicon recrystallized in a hydrogen atmosphere by floating-zone technique. The concentration of interstitial oxygen in the recrystallized silicon is only 3.5×1016 atoms cm−3, about 20 times lower than that in the as-grown CZ silicon. But more oxygen precipitates in the recrystallized silicon than in the as-grown CZ silicon have been observed after annealing for 4 h in the temperature range of 650–850°C. A dissolution of the oxygen precipitates formed by hydrogen catalysis occurs after a post-heating treatment 1000°C for 6 h, but a neutron transmutation doping (NTD) treatment can retard the dissolution.
