Title of article
Comparative analysis of the 1.54 μm emission of Er-doped Si/SiO2 films and the size distribution of the nanostructure
Author/Authors
Fonseca، نويسنده , , Luis F. and Resto، نويسنده , , O. and Soni، نويسنده , , R.K. and Buzaianu، نويسنده , , M. and Weisz، نويسنده , , S.Z. and Gomez، نويسنده , , M. and Jia، نويسنده , , W.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
109
To page
112
Abstract
Er3+-doped nanocrystalline-Si/SiO2 composite films were synthesized by RF co-sputtering of bulk-Si, SiO2, and Er2O3 targets. The visible and 1.54 μm emission bands of the samples were measured, as well as their optical transmission. We varied the relative concentrations of Si, Er, and the annealing temperature. The nanoparticles size distributions of the samples were obtained from their optical transmission spectra. We analyzed the dependence of the characteristic 1.54 μm Er-emission intensity on the size and concentration of the nanocrystalline particles and the dependence of the emission on the preparation conditions.
Keywords
Preparation conditions , emission , Nanostructure
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2135244
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