Title of article
Synthesis and photoluminescence properties of semiconductor nanowires
Author/Authors
Bai، نويسنده , , Z.G. and Yu، نويسنده , , D.P and Wang، نويسنده , , J.J and Zou، نويسنده , , Y.H and Qian، نويسنده , , W and Fu، نويسنده , , J.S. and Feng، نويسنده , , S.Q and Xu، نويسنده , , J and You، نويسنده , , L.P، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
117
To page
120
Abstract
GaSe and Si nanowires (SiNWs) were synthesized by physical evaporation. The photoluminescence (PL) properties of the Si nanowires were investigated in correlation with the diameter of the crystalline core. Intensive light emission was observed peaking at dark red, green and blue regions for the as grown and partially oxidized SiNW samples. The red PL emission is ascribed to the quantum confinement effect of the crystalline core of the SiNWs, while the green and blue ones are attributed to the radiative recombination of the defect centers in the amorphous silicon oxide layer surrounding the SiNWs.
Keywords
Photoluminescense , nanowires , Crystalline core
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2135246
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