Preparation of copper films by metal organic chemical vapor deposition on various substrates

Copper thin films have been prepared by metal organic chemical vapor deposition (MOCVD) technology on various substrates — TiN, W, Si, and polyimide. The Cu-MOCVD technology has advantages of the high deposition rate and the good step coverage compared to the conventional physical vapor deposition (PVD) technology in several industrial applications. The Cu films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The MOCVD system shows very high deposition rate up to 200 nm min−1 since the helium was used as the carrier gas.